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LL4150
HIGH-SPEED SWITCHING DIODE
FEATURES
High reliability High forward current capability
DL - 35
APPLICATIONS
High speed switch and general purpose use in
computer and industrial applications
.063(1.6) .055(1.4) .020(0.5) .012(0.3) .020(0.5) .012(0.3)
CONSTRUCTION
Silicon epitaxial planar
.146(3.7) .130(3.3)
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS
Parameter Repetitive peak reverse voltage Reverse Vltage Peak forward surge current Forward current Average forward current
(TJ=25)
Test Conditions Type Symbol VRRM VR tp=1uS Value 100 Unit V V
75
75
IFSM
IF IFAV PV TJ TsTg
75
53
A mA
mA mW
VR=0
Power dissipation Junction temperature
Storge temperature range
300 -65 ~ +175

MAXIMUM THERMAL RESISTANCE
Parameter Junction ambient
(TJ=25)
Test Conditions Symbol RthJA Value 500 Unit K/W
On PC board 50mm*50mm*1.6mm
ELECTRICAL CHARACTERISTICS
Parameter
TJ=25
Test Conditions IF=1mA IF=10mA Symbol VF VF VF VF VF IR IR CD trr Min 0.54 0.66 0.76 0.82 0.87 Typ Max 0.62 0.74 0.86 0.92 1.0 100 100 2.5 4 Unit V V V V V nA uA pF ns
Forward voltage
IF=50mA IF=100mA IF=200mA VR=50V VR=50V, Tj=150 VR=0, f=1MHZ, VHF=50mA IF= IR=10...100mA,RL=100
Reverse current Diode capacitance Reverse recovery time
~ 425 ~
RATING AND CHARACTERISTIC CURVES LL4150
FIG. 1 - MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT VS. AMBIENT TEMPERATURE 400
FIG. 2 -FORWARD CURRENT VS.FORWARD VOLTAGE 600 TJ=175C TYPICAL VALUES
300 IF (m A) 200 IF (m A)
400 TJ=25C TYPICAL VALUES
200 100
0 0 100 Tamb(C) 200
0 0 1 VF (V) 2
FIG.3-REVERSE CURRENT VS. JUNCTION TEMPERATURE 1000 1.2
FIG. 4 -DIODE CAPACITANCE VS. REVERSE VOLTAGE (TYPICAL VALUES)
100 1.0
IR (uA)
10
VR=75V TYPICAL VALUES
Cd (pF)
0.8
1 0.6 VR=20V TYPICAL VALUES 0.1 0.4 0 0.01 0 100 TJ((C) 200 10 VR(V) 20 f=1MHZ,TJ=25C
~ 426 ~

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